In this work, the mono-energetic positron annihilation spectroscopy (PAS) and the ionbeam technique are applied concurrently. In the first part, Ar+ ions are used to remove the sample surface during the positron annihilation spectroscopy measurement. For Dopplerbroadening spectroscopy, positron energies between 3 keV and 5 keV are chosen, allowing for high-resolution defect studies just below the sputtered surface. Using an Au-Cr-layered system, a significantly improved depth resolution of less than 100 nm can be demonstrated. Using a Cu(In,Ga)Se2 solar cell, it is shown that this method is even applicable to thicker samples. In the second part, the implantation of 30 keV He+ ions is used to investigate the temporal evolution of the defect concentration in-situ using PAS. A defect generation due to the ion implantation is measurable, but not the temporal evolution of the defect concentration.